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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD640 description collector-emitter breakdown voltage- : v (br)ceo = 400v (min) low collector-emitter saturation voltage- : v ce(sat) = 1.5v (max.)@ i c = 5a applications high voltage switching applications. high power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter max unit v cbo collector-base voltage 600 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 5 v i c collector current-continuous 7 a i b b base current-continuous 2 a p c collector power dissipation @t c =25 100 w t j junction temperature 150 t stg storage temperature range -65~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD640 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 400 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 1a b 1.5 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 1a b 2.0 v i cbo collector cutoff current v cb = 500v; i e = 0 0.1 ma i ebo emitter cutoff current v eb = 5v; i c = 0 1.0 ma h fe dc current gain i c = 1a; v ce = 5v 25 140 c ob output capacitance i e = 0; v cb = 50v; f test = 1.0mhz 70 pf f t current-gain?bandwidth product i c = 0.5a; v ce = 10v 3 mhz switching times t on turn-on time 1.0 s t stg storage time 3.0 s t f fall time i b1 = -i b2 = 0.3a; v cc = 200v 0.6 s isc website www.iscsemi.cn |
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